Structure of “star” defect in 4H-SiC substrates and epilayers

Title Shallow optically active structural defect in wurtzite GaN epilayers grown on stepped 4H-SiC substrates

Shallow optically active structural defect in wurtzite GaN epilayers grown on stepped 4H-SiC substrates

A number of wurtzite GaN epilayers directly grown on 4H-SiC ~0001! misoriented by 0, 3.5°, 5°, 8°, and 21° with plasma-assisted molecular-beam epitaxy were optically characterized with photoluminescence and excitation spectra. An intense shallow-defect emission peak locating at energy position ;70 meV lower than the near band edge emission peak at 3.47 eV is found in the emission spectra of the...

Non-Contact Characterization of Recombination Processes in 4H-SiC∗

Carrier decay transients in 4H-SiC n-type and p-type epilayers have been characterized using a non-destructive, non-contact microwave photoconductivity technique. Decay transients show a two-stage exponential decay with first decay constants as high as 400 ns in 10 μm p-type epilayers. The second decay constant increases with temperature and is dominated by interface recombination.

Chloride based CVD of 3C-SiC on (0001) α-SiC substrates

A chloride-based chemical-vapor-deposition (CVD) process has been successfully used to grow very high quality 3C-SiC epitaxial layers on on-axis α-SiC substrates. An accurate process parameters study was performed testing the effect of temperature, in situ surface preparation, precursor ratios, nitrogen addition, and substrate polytype and polarity. The 3C layers deposited showed to be largely ...

3C-SiC Heteroepitaxy on Hexagonal SiC Substrates

The growth of 3C-SiC on hexagonal polytype is addressed and a brief review is given for various growth techniques. The Chemical Vapor Deposition is shown as a suitable technique to grow single domain 3C epilayers on 4H-SiC substrate and a 12.5 μm thick layer is demonstrated; even thicker layers have been obtained. Various characterization techniques including optical microscopy, X-ray technique...